• DocumentCode
    3197873
  • Title

    Electrical properties of high-k ZrO2 gate dielectrics on strained Ge-rich layers

  • Author

    Bhattacharya, S. ; McCarthy, J. ; Armstrong, B.M. ; Gamble, H.S. ; Dalapati, G.K. ; Das, S. ; Chakraborty, S. ; Maiti, C.K. ; Perova, T.S. ; Moore, R.A.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Univ. of Belfast, UK
  • Volume
    1
  • fYear
    2004
  • fDate
    16-19 May 2004
  • Firstpage
    405
  • Abstract
    The electrical properties of ultrathin high-k ZrO2 gate dielectric films deposited on strained Ge-rich layers using microwave plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature (150°C) have been studied. The strained Ge-rich heterolayers have been analyzed by transmission: electron microscopy (TEM) and Raman spectra. X-ray photoelectron spectroscopy (XPS) has been used for analysis of chemical compositions of the deposited ZrO2 films. The fixed oxide charge density (Qp/q) and interface state density (Dit) are found to be 4.8 × 1011 cm-2 and 5.1 × 1010 eV-1 cm-2, respectively. The capacitance-voltage (C-V) characteristics and current-voltage (I-V) characteristics before and after constant current stressing exhibit good electrical properties and thus indicate the suitability of these films for future microelectronic applications.
  • Keywords
    Ge-Si alloys; MOS capacitors; Raman spectra; X-ray diffraction; X-ray photoelectron spectra; dielectric thin films; electrical conductivity; elemental semiconductors; germanium; plasma CVD coatings; semiconductor-insulator boundaries; transmission electron microscopy; zirconium compounds; 150 degC; GeSi; Raman spectra; X-ray photoelectron spectroscopy; ZrO2; capacitance-voltage characteristics; current-voltage characteristics; electrical properties; fixed oxide charge density; future microelectronic applications; good electrical properties; high-k ZrO2 gate dielectrics; interface state density; microwave plasma enhanced chemical vapor deposition; strained Ge-rich heterolayers; strained Ge-rich layers; suitability; transmission: electron microscopy; Capacitance-voltage characteristics; Chemical analysis; Dielectric films; High K dielectric materials; High-K gate dielectrics; Microwave theory and techniques; Plasma chemistry; Plasma properties; Plasma temperature; Plasma x-ray sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2004. 24th International Conference on
  • Print_ISBN
    0-7803-8166-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2004.1314652
  • Filename
    1314652
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3197873