• DocumentCode
    3197922
  • Title

    An experimental and computer simulation study of the role of CdS in CIS-type solar cells

  • Author

    Hou, Jingya ; Fonash, Stephen J. ; Kessler, John

  • Author_Institution
    Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    961
  • Lastpage
    964
  • Abstract
    An experimental and computer simulation study of the “red kink” current-voltage features seen in many CdS/Cu(In,Ga)Se2 solar cells has been undertaken to gain more insight into cell operation and to address the controversy over the role of the CdS layer. The study shows that in structures with chemical bath deposited CdS: (1) the “red kink” effect is due to a low free electron concentration and high trap state concentration in the CdS layer, (2) the direct cause of the “red kink” is current modulated free electron concentration in the CdS, and (3) under white light the positive space charge built-up in CdS traps greatly enhances the photo-carrier collecting electric field in the absorber layer. Therefore, the CdS layer has an important role in the junction under white light
  • Keywords
    II-VI semiconductors; cadmium compounds; copper compounds; electric current measurement; indium compounds; power engineering computing; simulation; solar cells; space charge; ternary semiconductors; voltage measurement; CIS-type solar cells; CdS; CdS-Cu(InGa)Se2; CdS/Cu(In,Ga)Se2 solar cells; absorber layer; cell operation; chemical bath deposited CdS; computer simulation; current modulated free electron concentration; high trap state concentration; low free electron concentration; photo-carrier collecting electric field; positive space charge; red kink current-voltage features; white light; Chemicals; Computer simulation; Electron traps; Energy conversion; Laboratories; Lighting; Microelectronics; Optical modulation; Photovoltaic cells; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564289
  • Filename
    564289