DocumentCode
3197969
Title
Consequences of Bandgap Shifts Resulting from Decreasing CIGS Thickness in CIGS Solar Cells
Author
Chandrasekaran, V. ; Ferekides, C.S. ; Morel, D.L.
Author_Institution
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL
Volume
1
fYear
2006
fDate
38838
Firstpage
442
Lastpage
444
Abstract
We investigated the effects on performance of reducing the thickness of CIGS solar cells. One of the important observations is that there is an apparent bandgap increase as the thickness is reduced. This is attributed to the details of our device fabrication and resulting Ga profile. AMPS simulations indicate that accompanying expected lowering of Jsc due to absorption losses, we should expect increases in Voc and FF resulting in a net gain in efficiency. As we decrease thickness the losses that we observe in Jsc are larger than expected from absorption due to two factors: the unexpected bandgap increase and increased defect density at the junction interface. However, while AMPS predicts an increase of 13 mV in Voc, the increase we observe is in the 20-30 mV range. Jsc´sfor one micron thick devices have also been increased to 30.5 mA/cm2 which is somewhat above what is expected from simulations
Keywords
copper compounds; energy gap; gallium compounds; indium compounds; semiconductor device models; solar cells; ternary semiconductors; 20 to 30 mV; AMPS simulations; CIGS solar cells; CIGS thickness; CuIn1-xGaxSe2; Ga profile; absorption losses; bandgap shifts; defect density; device fabrication; junction interface; micron thick devices; Absorption; Costs; Fabrication; Hydrogen; Layout; Photonic band gap; Photovoltaic cells; Production; Propagation losses; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
1-4244-0017-1
Electronic_ISBN
1-4244-0017-1
Type
conf
DOI
10.1109/WCPEC.2006.279485
Filename
4059658
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