An advanced RF-CV method as a powerful characterization tool for the description of HC induced defect generation at microscopic level

A MOS Capacitance-Voltage method in Radio-Frequency domain is presented. Characterization at higher frequency is becoming essential especially for advanced technology nodes that are confronted with gate leakage. Contrary to all other present methods, a full exploitation of S-parameters is performed to get key information regarding defect localization. The technique allows for MOS parameter extraction of the intrinsic and extrinsic components which enhances the scope of the defect localization area. An application of this method is performed to physically analyse the impact of three different energetic hot carrier degradation modes and also point out the unique signature of each degradation mode.