Hot-carrier and recovery effect on p-channel lateral DMOS

Author

Aresu, S. ; Vollertsen, R.-P. ; Rudolf, R. ; Schlünder, C. ; Reisinger, H. ; Gustin, W.

Author_Institution

Central Reliability Dept., Infineon Technol. AG, Neubiberg, Germany

fYear

2011

fDate

16-20 Oct. 2011

Firstpage

77

Lastpage

81

Abstract

Hot-carrier, inducing source-drain current (I_DS) increase in high-voltage p-channel lateral DMOS (LDMOS) transistors, is investigated. At low gate voltage (V_GS) and high drain voltage (V_DS), electrons are injected into the gate oxide, creating negative fixed oxide charges and interface-states above the accumulation region and the channel towards the source side (Figure 1). The source drain current (I_DS) increase leads to threshold voltage shift (V_TH→0V) and for higher stress conditions a drain-source leakage can be observed. The effect has been analyzed combining experimental data and TCAD simulations. For the first time recovery effect after hot carrier stress even at low temperature is reported.

Keywords

MOSFET; hot carriers; LDMOS transistors; TCAD simulations; drain-source leakage; gate oxide; high-voltage p-channel lateral DMOS transistors; hot carrier stress; hot-carrier effect; interface states; negative fixed oxide charges; source-drain current; threshold voltage shift; time recovery effect; Current measurement; Degradation; Hot carriers; Logic gates; Stress; Threshold voltage; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4577-0113-9

Type

conf

DOI

10.1109/IIRW.2011.6142593

Filename

6142593