Title :
TDDB characterization of BST capacitors exhibiting bimodal Weibull distributions
Author :
Lin, H. ; Bouyssou, E. ; Ventura, L.
Author_Institution :
STMicroelectron., Tours, France
Abstract :
BST thin-film capacitors breakdown have been studied as a function of applied voltage and temperature. This paper deals with a bimodal behaviour observed from Time Dependent Dielectric Breakdown (TDDB) experiments. This double population makes it difficult to assess properly the components reliability. We show that these two populations are related to two intrinsic and distinct failures. Through an extensive study of leakage current conduction mechanisms, we exhibit that the Poole-Frenkel model can be used for both populations with two distinct trap heights of 0.6 and 0.9 eV directly related to this reliability behaviour.
Keywords :
Weibull distribution; barium compounds; circuit reliability; electric breakdown; failure analysis; strontium compounds; thin film capacitors; BST; BST thin-film capacitors breakdown; Poole-Frenkel model; TDDB characterization; TDDB experiments; bimodal Weibull distributions; component reliability; distinct failure; electron volt energy 0.6 eV; electron volt energy 0.9 eV; intrinsic failure; leakage current conduction mechanisms; time dependent dielectric breakdown; Capacitors; Electric breakdown; Leakage current; Reliability; Stress; Temperature measurement; Weibull distribution;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4577-0113-9
DOI :
10.1109/IIRW.2011.6142595
