Design criteria for BJT amplifiers with low 1/f AM and PM noise

Author

Pikal, E. S Fem ; Walls, F.L. ; Nelson, C.W.

Author_Institution

Nat. Inst. of Stand. & Technol., Boulder, CO, USA

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

305

Lastpage

313

Abstract

In this paper we discuss guidelines for designing linear bipolar junction transistor (BJT) amplifiers with low 1/f amplitude modulation (AM) and phase modulation (PM) noise. These guidelines are derived from a new theory that relates AM and PM noise to transconductance fluctuations, junction capacitance fluctuations, and circuit architecture. We analyze the noise equations of each process for a common emitter (CE) amplifier and use the results to suggest amplifier designs that minimize the 1/f noise while providing other required attributes such as high gain. Although we use a CE amplifier as an example, the procedure applies to other configurations as well. Experimental noise results for several amplifier configurations are presented

Keywords

1/f noise; amplifiers; amplitude modulation; capacitance; circuit noise; equivalent circuits; flicker noise; fluctuations; linear network synthesis; phase modulation; 1/f noise minimisation; amplitude modulation noise; bipolar junction transistor amplifiers; circuit architecture; common emitter amplifier; design criteria; junction capacitance fluctuations; linear BJT amplifiers; low 1/f AM noise; low 1/f PM noise; phase modulation noise; transconductance fluctuations; Amplitude modulation; Capacitance; Circuit noise; Fluctuations; Guidelines; Low-noise amplifiers; Noise level; Phase modulation; Phase noise; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 1995. 49th., Proceedings of the 1995 IEEE International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2500-1

Type

conf

DOI

10.1109/FREQ.1995.483915

Filename

483915