DocumentCode
3198512
Title
Generation of single-and double-charge electron traps in tunnel oxide of flash memory cells under Fowler-Nordheim stress
Author
Tkachev, Yuri ; Kotov, Alexander
Author_Institution
Silicon Storage Technol. Inc. (a Subsidiary of Microchip Technol. Inc.), San Jose, CA, USA
fYear
2011
fDate
16-20 Oct. 2011
Firstpage
101
Lastpage
104
Abstract
The processes of trap generation and electron trapping in tunnel oxide of SuperFlash® memory cells have been analyzed. It was shown that electrons were mostly trapped by newly generated traps rather than by as-fabricated ones. Due to strongly localized tunneling in SuperFlash cell, it was possible to detect the events of the generation of individual oxide traps. The direct electrical evidence of both single- and double-charge electron trap generation has been observed.
Keywords
electron traps; flash memories; tunnelling; Fowler-Nordheim stress; SuperFlash memory cell; double-charge electron trap generation; individual oxide trap generation; single-charge electron trap generation; tunnel oxide; Electron traps; Kinetic theory; Modulation; Reliability; Silicon compounds; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4577-0113-9
Type
conf
DOI
10.1109/IIRW.2011.6142599
Filename
6142599
Link To Document