Title :
The effect of fluorine implant on NBTI behaviour in BCD-processes
Author :
Olthof, Edgar ; Combrié, Martin ; Van Marwijk, Leo ; Claes, Jan ; Dubois, Jerôme ; Thillaigovindan, Jayaraj ; Sun, Jianhua ; Ng, William
Author_Institution :
NXP Semicond., Nijmegen, Netherlands
Abstract :
Implanting fluorine in pMOST devices was used to reduce their susceptibility to NBTI. The exact process step at which this implant is performed, determines the effectiveness of this reduction. This article presents the results of several experiments that were conducted in implanting fluorine.
Keywords :
MOSFET; fluorine; semiconductor device reliability; BCD-processes; NBTI behaviour; fluorine implant; pMOST devices; Degradation; Implants; Resistance; Semiconductor device reliability; Stress; Threshold voltage; Transistors;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2011 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4577-0113-9
DOI :
10.1109/IIRW.2011.6142600
