DocumentCode :
3198761
Title :
Study on Phase Transition of Zn1-XMgXO Thin Films Grown by MOCVD Process
Author :
Chiba, Yoshiyuki ; Meng, F.Y. ; Yamada, Akira ; Konagai, Makoto
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol.
Volume :
1
fYear :
2006
fDate :
38838
Firstpage :
567
Lastpage :
570
Abstract :
We have grown Zn1-xMgxO films by MOCVD process with a gas mixture of diethylzinc(DEZ), H2O and bis-methylcyclopentadienyl-Mg {MeCp2Mg:(CH3C5 H4Mg)}. We found that phase transition from wurtzite to rocksalt structure was strongly influenced by substrate temperature and MeCp2Mg gas phase concentration. Wurtzite structure was dominant under high substrate temperature, and rocksalt was dominant under high MeCp2Mg gas phase concentration. This behavior was in good agreement with our calculation of enthalpy for each structure. We also found that film structure was not uniform in growth direction under low substrate temperature due to the phase transition. These result suggested that higher growth temperature were preferable to the growth of high Mg content wurtzite Zn1-xMgxO for the MOCVD process
Keywords :
II-VI semiconductors; MOCVD; magnesium compounds; semiconductor growth; semiconductor thin films; solid-state phase transformations; zinc compounds; MOCVD process; Zn1-xMgxO; bis-methylcyclopentadienyl-Mg; diethylzinc; enthalpy; gas phase concentration; phase transition; thin film growth; thin film structure; wurtzite-rocksalt structure; Buffer layers; MOCVD; Optical films; Photonic band gap; Sputtering; Substrates; Temperature; Transistors; Water; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279519
Filename :
4059692
Link To Document :
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