DocumentCode
3198783
Title
Cd-Free Wide Gap CuIn1-xGaxSe2 Solar Cells using Zn1-yMgyO Deposited by Pulsed Laser Deposition
Author
Matsubara, K. ; Yamada, A. ; Ishizuka, S. ; Sakurai, K. ; Tampo, H. ; Yonemura, M. ; Nakamura, S. ; Nakanishi, H. ; Niki, S.
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
Volume
1
fYear
2006
fDate
38838
Firstpage
571
Lastpage
574
Abstract
Cd-free wide gap CuIn1-xGaxSe2 (CIGS) solar cells were fabricated. Un-doped Zn1-yMgy O (ZMO) and Al-doped Zn1-yMgyO (AZMO) were used as window and transparent conducting (TC) layers, respectively. These layers were deposited by both RF-sputtering and pulsed laser deposition (PLD). While the Cd-free cells fabricated using RF-sputtering showed no solar cell response, these using PLD had solar cell properties. These results suggested that a sputtering process induced damage on CIGS absorber layer or on the interface between CIGS and window layer. Cd-free cells with ZMO window layer had the higher open circuit voltage Voc than those with ZnO window layer. Voc of Cd-free cells with AZMO TC layer was higher than that of AZO TC layer
Keywords
II-VI semiconductors; aluminium; copper compounds; indium compounds; pulsed laser deposition; semiconductor thin films; solar cells; sputter deposition; ternary semiconductors; zinc compounds; CuIn1-xGaxSe2; RF-sputtering deposition; Zn1-yMgyO; Zn1-yMgyO:Al; absorber layer; pulsed laser deposition; solar cells; transparent conducting layers; window layer; Buffer layers; Circuits; Electrons; Laser theory; Optical pulses; Photovoltaic cells; Pulsed laser deposition; Sputtering; Voltage; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
1-4244-0017-1
Electronic_ISBN
1-4244-0017-1
Type
conf
DOI
10.1109/WCPEC.2006.279520
Filename
4059693
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