Title :
Improvement of CIGS microstructure and its effect on the conversion efficiency of CIGS solar cells
Author :
Kim, Ki Hwan ; Kim, Min Sik ; Ahn, Byung Tae ; Yun, Jae Ho ; HoonYoon, Kyung
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon
Abstract :
The Cu(In,Ga)Se2(CIGS) film was deposited on Mo-coated sodalime glass by three stage co-evaporation of elemental In, Ga, Cu, and Se sources. The Se flux during the co-evaporation has great influence on the microstructure of CIGS layer. The surface region of CIGS film showed pores when the Se flux was large. The conversion efficiency of CdS/CIGS solar cells was depended on the CIGS surface morphology. The best CIGS solar cell was obtained at 15 Aring/s Se vapor pressure condition and it had the following photovoltaic parameters: conversion efficiency of 17.57%, Jsc=36.48 mA/cm 2, Voc=0.655 V and FF=73.5% in an active area of 0.421 cm2
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; photovoltaic effects; semiconductor thin films; solar cells; surface morphology; ternary semiconductors; vacuum deposition; 0.655 V; CdS-Cu(InGa)Se2; coevaporation; conversion efficiency effect; molybdenum-coated sodalime glass; photovoltaic parameters; semiconductor film; semiconductor microstructure; solar cells; surface morphology; Glass; Materials science and technology; Microstructure; Optical films; Photovoltaic cells; Photovoltaic systems; Shape; Solar power generation; Substrates; Surface morphology;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279521
