Improvement of CIGS microstructure and its effect on the conversion efficiency of CIGS solar cells

Author

Kim, Ki Hwan ; Kim, Min Sik ; Ahn, Byung Tae ; Yun, Jae Ho ; HoonYoon, Kyung

Author_Institution

Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon

Volume

1

fYear

2006

fDate

38838

Firstpage

575

Lastpage

578

Abstract

The Cu(In,Ga)Se₂(CIGS) film was deposited on Mo-coated sodalime glass by three stage co-evaporation of elemental In, Ga, Cu, and Se sources. The Se flux during the co-evaporation has great influence on the microstructure of CIGS layer. The surface region of CIGS film showed pores when the Se flux was large. The conversion efficiency of CdS/CIGS solar cells was depended on the CIGS surface morphology. The best CIGS solar cell was obtained at 15 Aring/s Se vapor pressure condition and it had the following photovoltaic parameters: conversion efficiency of 17.57%, J_sc=36.48 mA/cm ², V_oc=0.655 V and FF=73.5% in an active area of 0.421 cm²

Keywords

II-VI semiconductors; cadmium compounds; copper compounds; photovoltaic effects; semiconductor thin films; solar cells; surface morphology; ternary semiconductors; vacuum deposition; 0.655 V; CdS-Cu(InGa)Se₂; coevaporation; conversion efficiency effect; molybdenum-coated sodalime glass; photovoltaic parameters; semiconductor film; semiconductor microstructure; solar cells; surface morphology; Glass; Materials science and technology; Microstructure; Optical films; Photovoltaic cells; Photovoltaic systems; Shape; Solar power generation; Substrates; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279521

Filename

4059694