DocumentCode :
3198905
Title :
Surface Activated Bonding between Au layer and vertically aligned Multi-Wall Carbon Nanotubes
Author :
Fujino, Masahisa ; Suga, Tadatomo ; Soga, Ikuo ; Kond, Daiyu ; Ishizuki, Yoshikatsu ; Iwai, Taisuke ; Mizukoshi, Masataka
Author_Institution :
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
fYear :
2010
fDate :
13-16 Sept. 2010
Firstpage :
1
Lastpage :
4
Abstract :
In this research, vertically aligned Muti-Walled Carbon Nanotubes (CNTs) and Au-layer were bonded by Surface Activated Bonding method. Vertically aligned CNTs were grown by acetylene-CVD with Fe catalyst and were formed bump shape with 200 μm diameter and around 200 μm height. These CNT bumps and Au layer were cleaned and activated by Argon Fast Atom Beam (Ar-FAB) process and bonded with some load. As a result, MWNTs-Au bonding was succeeded on condition that CNT bumps and Au layer were Ar-FAB processed longer than 300 sec, and bonding pressure was larger than 0.17 MPa, and the average resistance of CNT was 130 kΩ. Furthermore, when the bonding pressure was 0.7 MPa, the average resistance of one was 16 Ω.
Keywords :
bonding processes; carbon nanotubes; catalysis; chemical vapour deposition; gold; Au; C; acetylene-CVD; argon fast atom beam process; average resistance; bonding pressure; catalyst; surface activated bonding; vertically aligned multiwall carbon nanotubes; Area measurement; Gold; Heating; Pumps; Semiconductor device measurement; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic System-Integration Technology Conference (ESTC), 2010 3rd
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-8553-6
Electronic_ISBN :
978-1-4244-8554-3
Type :
conf
DOI :
10.1109/ESTC.2010.5642937
Filename :
5642937
Link To Document :
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