Inter-symbol interference (ISI) in on-die transmission lines

Author

Rysin, A. ; Livshits, P. ; Sofer, S. ; Mantel, O. ; Shapira, Y. ; Fefer, Y.

fYear

2009

fDate

9-11 Nov. 2009

Firstpage

1

Lastpage

5

Abstract

The waveforms of a signal transmitted through single-ended on-die transmission lines, implemented by standard metal layers of a CMOS 45 nm technology node, have been experimentally studied. The influence of the active loss level of the lines, as well as of the impedance mismatch between the transmission line and its driver upon the signal distortion, and particularly upon the inter-symbol interference, is discussed.

Keywords

CMOS integrated circuits; VLSI; distortion; impedance matching; integrated circuit interconnections; intersymbol interference; transmission lines; CMOS technology; VLSI; active loss level; impedance mismatch; intersymbol interference; metal layers; on-die transmission lines; signal distortion; signal transmitted waveforms; size 45 nm; CMOS technology; Dielectric losses; Distortion; Impedance; Intersymbol interference; Power transmission lines; Propagation losses; Repeaters; Transmission lines; Very large scale integration; VLSI; global wiring; inter-symbol interference; on-chip interconnections; on-chip transmission line; transmission line;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on

Conference_Location

Tel Aviv

Print_ISBN

978-1-4244-3985-0

Type

conf

DOI

10.1109/COMCAS.2009.5385987

Filename

5385987