Title :
A 32dBm power amplifier for WiMAX applications in 90nm CMOS
Author :
Degani, Ofir ; Cossoy, Fabian ; Shahaf, Shay ; Kravtsov, Vladimir ; Chowdhury, Debopriyo ; Hull, Christopher D. ; Emanuel, Cohen ; Ravid, Shmuel
Author_Institution :
Mobility Wireless Group, Intel Corp., Haifa, Israel
Abstract :
A compact 90 nm CMOS power amplifier with integrated transformer/BALUN matching network, for 2.32.7 GHz WiMAX (802.16e) band applications, is demonstrated. The PA gain and saturated power are +18 dB and +32 dBm, respectively, working from a 3.3 V supply, with a peak power added efficiency (PAE) of 48%. A memory-less Digital Pre Distortion (DPD) technique is used to enhance the PA linearity. The measured EVM for a 64-QAM OFDM signal is improved from -24 dB to -30 dB at +25 dBm output power. Compliance with the 802.16e standard 10 MHz WiMAX mask and FCC regulations is demonstrated at +25 dBm of output power with power efficiency of ~25%, and with a measured second harmonic level of -31[dBm/MHz].
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; WiMax; 64-QAM OFDM signal; CMOS power amplifier; WiMAX applications; frequency 2.3 GHz to 2.7 GHz; integrated transformer-BALUN matching network; memory-less digital predistortion technique; peak power added efficiency; size 90 nm; voltage 3.3 V; Circuit faults; Distortion measurement; Impedance matching; Linearity; Measurement standards; OFDM; Power amplifiers; Power generation; Power measurement; WiMAX; 802.16e; CMOS; Wimax; power amplifiers; pre distortion;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4244-3985-0
DOI :
10.1109/COMCAS.2009.5385998
