DocumentCode :
3199176
Title :
The Development of an 1kW HCPV System at INER
Author :
Tzeng, Yen-Chang ; Hong, Hwen-Fen ; Wu, Chih-Hung ; Cheng, Chieh ; Shin, Hwa-Yuh
Author_Institution :
Inst. of Nucl. Energy Res., Taoyuan
Volume :
1
fYear :
2006
fDate :
38838
Firstpage :
648
Lastpage :
650
Abstract :
The design of an 1kW concentrator test module and its outdoor measurement results at INER, Taiwan are presented. The PV receiver is formed on the base of InGaP/GaAs/Ge triple junction solar cells with an optical concentrating ratio about 100x. A module efficiency as high as 22.3% has been obtained under 850 W/m2 DNI with passive cooling
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; photovoltaic power systems; semiconductor heterojunctions; solar cells; solar energy concentrators; 1 kW; HCPV system; InGaP-GaAs-Ge; PV receiver; concentrator test module; high concentration photovoltaic module; passive cooling; photovoltaic power generation; triple junction solar cells; Heat sinks; Lenses; Optical collimators; Optical materials; Photovoltaic cells; Photovoltaic systems; Solar heating; Solar power generation; System testing; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279538
Filename :
4059711
Link To Document :
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