DocumentCode
3199307
Title
Built-in Current Sensor for High Speed Transient Current Testing in Analog CMOS Circuits
Author
Yellampalli, Siva ; Korivi, N.S. ; Marulanda, J.
Author_Institution
Louisiana State Univ., Baton Rouge
fYear
2008
fDate
16-18 March 2008
Firstpage
230
Lastpage
234
Abstract
In this paper, we present a new built-in current sensor (BICS) for high speed, low voltage degradation transient current (IDDT) testing. This sensor has been designed using forward bias technique to limit the supply voltage degradation caused during transient current peaks to 2% of the supply voltage. A CMOS operational amplifier designed for operation at plusmn2.5 V in 0.5 mum n-well CMOS process is used as the circuit under test (CUT). The faults simulating possible short and bridging defects are introduced using the fault injection transistors (FIT). A total of twenty short faults have been introduced into the CUT and nineteen of them were detected, giving 95% fault coverage.
Keywords
CMOS analogue integrated circuits; built-in self test; fault simulation; integrated circuit testing; operational amplifiers; power supply circuits; CMOS operational amplifier; CMOS process; analog CMOS circuits; built-in current sensor; circuit under test; fault injection transistors; fault simulation; forward bias technique; high speed transient current testing; low voltage degradation transient current testing; supply voltage degradation; CMOS analog integrated circuits; CMOS process; Circuit faults; Circuit simulation; Circuit testing; Degradation; Electrical fault detection; Fault detection; Low voltage; Operational amplifiers; Built-In Current Sensor; Forward Biasing; Low Voltage Degradation; Transient Current Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
System Theory, 2008. SSST 2008. 40th Southeastern Symposium on
Conference_Location
New Orleans, LA
ISSN
0094-2898
Print_ISBN
978-1-4244-1806-0
Electronic_ISBN
0094-2898
Type
conf
DOI
10.1109/SSST.2008.4480227
Filename
4480227
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