DocumentCode
3199430
Title
The role of Cu(InGa)(SeS)2 surface layer on a graded band-gap Cu(InGa)Se2 thin-film solar cell prepared by two-stage method
Author
Kushiya, Katsumi ; Kuriyagawa, Satoru ; Kase, Takahisa ; Tachiyuki, Muneyori ; Sugiyama, Lchiro ; Satoh, Yasuhiko ; Satoh, Masao ; Takeshita, Hiroshi
Author_Institution
Central R&D Lab., Showa Shell Sekiyu K.K., Kanagawa, Japan
fYear
1996
fDate
13-17 May 1996
Firstpage
989
Lastpage
992
Abstract
The purpose of this study is to understand the current baseline process for the absorber formation by a two-stage method and make the process more reliable and reproducible through the investigation of the formation chemistry of the Cu(InGa)Se2 (CIGS) thin-film absorbers with a graded band-gap structure and Cu(InGa)(SeS)2 (CIGSS) surface layer. A 50-cm2 aperture-area efficiency of 13% measured at NREL, which has been reported for the first time in a CIGS thin-film solar module with a Cd-free, sulfur-contained Zn-compound buffer layer, should be a good evidence of the role of CIGSS surface layer on the performance of CIGS thin-film solar cells
Keywords
copper compounds; energy gap; gallium compounds; indium compounds; semiconductor device testing; semiconductor thin films; solar cells; Cu(InGa)(SeS)2 surface layer; CuInGaSe2; CuInGaSeS2; PV performance; formation chemistry; graded band-gap Cu(InGa)Se2 thin-film solar cell; graded band-gap structure; thin-film absorbers; two-stage preparation method; Buffer layers; Chemistry; Fabrication; Photonic band gap; Photovoltaic cells; Semiconductor thin films; Sputtering; Substrates; Time measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location
Washington, DC
ISSN
0160-8371
Print_ISBN
0-7803-3166-4
Type
conf
DOI
10.1109/PVSC.1996.564296
Filename
564296
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