Ku-band 20 W power GaAs FETs

Author

Saito, Yuya ; Kuzuhara, T. ; Ohmori, T. ; Kai, Kenji ; Ishimura, H. ; Tokuda, Hirokuni

Author_Institution

Microwave Solid-State Dept., Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

16-20 May 1995

Firstpage

343

Abstract

High power Ku-band internally matched GaAs FETs have been developed using multi-chip power combiner/divider technology. An output power of 43.2 dBm at 1 dB gain compression with 6.9 dB gain and 29.5% power-added-efficiency has been obtained at 14 GHz. This state-of-the-art performance has been achieved by (1) optimizing the carrier concentration profiles of the active layer and making the buffer layer resistivity higher, (2) adopting the double-recess structure to get the higher breakdown voltage and (3) designing the high efficiency power combiner/divider circuits.<>

Keywords

III-V semiconductors; carrier density; gallium arsenide; microwave field effect transistors; microwave power transistors; power MESFET; power combiners; power dividers; power field effect transistors; 14 GHz; 20 W; 29.5 percent; 6.9 dB; GaAs; Ku-band; active layer; breakdown voltage; buffer layer resistivity; carrier concentration profiles; double-recess structure; gain compression; internally matched FETs; multi-chip power combiner/divider technology; output power; power combiner/divider circuits; power-added-efficiency; Buffer layers; Conductivity; FETs; Fingers; Gain; Gallium arsenide; MESFETs; Power combiners; Power generation; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405973

Filename

405973