Title :
Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells
Author :
Wanlass, Mark ; Ahrenkiel, Phil ; Albin, David ; Carapella, Jeff ; Duda, Anna ; Emery, Keith ; Friedman, Daniel ; Geisz, John ; Jones, Kim ; Kibbler, Alan ; Kiehl, James ; Kurtz, Sarah ; McMahon, William ; Moriarty, Tom ; Olson, Jerry ; Ptak, Aaron ; Rome
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO
Abstract :
We present here a new approach to tandem cell design that offers near-optimum subcell bandgaps, as well as other special advantages related to cell fabrication, operation, and cost reduction. Monolithic, ultra-thin GaInP/GaAs/GaInAs triple-bandgap tandem solar cells use this new approach, which involves inverted epitaxial growth, handle mounting, and parent substrate removal. The optimal ~1-eV bottom subcell in the tandem affords an -300 mV increase in the tandem voltage output when compared to conventional Ge-based, triple-junction tandem cells, leading to a potential relative performance improvement of 10-12% over the current state of the art. Recent performance results and advanced design options are discussed
Keywords :
III-V semiconductors; cost reduction; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; solar cells; GaInP-GaAs-GaInAs; cost reduction; inverted epitaxial growth; monolithic ultra-thin tandem solar cells; parent substrate removal; solar cell fabrication; solar cell operation; triple-junction tandem cells; Costs; Epitaxial growth; Fabrication; Gallium arsenide; Lattices; Photonic band gap; Photovoltaic cells; Substrates; US Government; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279559
