Title :
An 11 W Ku-band heterostructure FET with WSi/Au T-shaped gate
Author :
Udomoto, J. ; Chaki, Sagar ; Komaru, M. ; Kunii, T. ; Kohno, Yusuke ; Goto, Satoshi ; Gotoh, Kaoru ; Inoue, Akira ; Tanino, N. ; Takagi, Toshiyuki ; Ishihara, O.
Author_Institution :
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
We developed a heterostructure FET (HFET) with a high output power and a high power-added efficiency (PAE) at Ku-band. 8 W and 11.2 W output powers were obtained with power-added efficiencies of 48% and 41% and linear gains of 9 dB and 8.6 dB at 12 GHz, respectively. This is the highest power and efficiency ever reported which is achieved by a single FET chip at this frequency.<>
Keywords :
III-V semiconductors; gallium arsenide; gold; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device reliability; tungsten compounds; 11 W; 12 GHz; 41 percent; 48 percent; 8 W; 8.6 dB; 9 dB; GaAs-WSi-Au; Ku-band; T-shaped gate; heterostructure FET; linear gains; output power; power-added efficiency; Artificial intelligence; Frequency; Gallium arsenide; Gold; HEMTs; MESFETs; MODFETs; Microwave FETs; Power generation; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405974
