Title :
High power, high voltage FETs in linear applications: A user´s perspective
Author :
Greenough, N. ; Fredd, E. ; DePasquale, S.
Author_Institution :
Princeton Plasma Phys. Lab., Princeton, NJ, USA
Abstract :
The specifications of the current crop of high-power, high-voltage field-effect transistors (FETs) can lure a designer into employing them in high-voltage DC equipment. Devices with extremely low on-resistance and very high power ratings are available from several manufacturers. However, our experience shows that high-voltage, linear operation of these devices at near-continuous duty can present difficult reliability challenges at stress levels well-below their published specifications. This paper chronicles the design evolution of a 600 volt, 8 ampere shunt regulator for use with megawatt-class radio transmitters, and presents a final design that has met its reliability criteria.
Keywords :
power field effect transistors; reliability; stress effects; FET; current 8 A; high-power field-effect transistors; high-voltage DC equipment; high-voltage field-effect transistors; megawatt-class radio transmitters; reliability; shunt regulator; stress levels; voltage 600 V; Circuits; FETs; Manufacturing; Radio frequency; Regulators; Resistors; Silicon; Temperature; Threshold voltage; Transmitters;
Conference_Titel :
Fusion Engineering, 2009. SOFE 2009. 23rd IEEE/NPSS Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2635-5
Electronic_ISBN :
978-1-4244-2636-2
DOI :
10.1109/FUSION.2009.5226417
