• DocumentCode
    3199932
  • Title

    High power, high voltage FETs in linear applications: A user´s perspective

  • Author

    Greenough, N. ; Fredd, E. ; DePasquale, S.

  • Author_Institution
    Princeton Plasma Phys. Lab., Princeton, NJ, USA
  • fYear
    2009
  • fDate
    1-5 June 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The specifications of the current crop of high-power, high-voltage field-effect transistors (FETs) can lure a designer into employing them in high-voltage DC equipment. Devices with extremely low on-resistance and very high power ratings are available from several manufacturers. However, our experience shows that high-voltage, linear operation of these devices at near-continuous duty can present difficult reliability challenges at stress levels well-below their published specifications. This paper chronicles the design evolution of a 600 volt, 8 ampere shunt regulator for use with megawatt-class radio transmitters, and presents a final design that has met its reliability criteria.
  • Keywords
    power field effect transistors; reliability; stress effects; FET; current 8 A; high-power field-effect transistors; high-voltage DC equipment; high-voltage field-effect transistors; megawatt-class radio transmitters; reliability; shunt regulator; stress levels; voltage 600 V; Circuits; FETs; Manufacturing; Radio frequency; Regulators; Resistors; Silicon; Temperature; Threshold voltage; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Fusion Engineering, 2009. SOFE 2009. 23rd IEEE/NPSS Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-4244-2635-5
  • Electronic_ISBN
    978-1-4244-2636-2
  • Type

    conf

  • DOI
    10.1109/FUSION.2009.5226417
  • Filename
    5226417