Title :
Design considerations for GaN based MMICs
Author :
Campbell, Charles F. ; Dumka, Deep C. ; Kao, Ming-Yih
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
Select considerations related to gallium nitride (GaN) based MMIC design are discussed. The unique properties of this material pose challenges to IC designers not typically encountered in gallium arsenide (GaAs) based technology. Specific examples of how some of these issues impact circuit design are discussed for wideband power amplifiers, high efficiency class-E power amplifiers and high power switching transistors.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; integrated circuit design; wide band gap semiconductors; wideband amplifiers; GaN; IC designers; MMICs; circuit design; class-E power amplifiers; power switching transistor; wideband power amplifier; Broadband amplifiers; Capacitors; Gallium arsenide; Gallium nitride; High power amplifiers; MMICs; Power amplifiers; Power generation; Switches; Switching circuits; Class-E power amplifiers; Gallium Nitride; control components; wideband power amplifiers;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4244-3985-0
DOI :
10.1109/COMCAS.2009.5386036
