DocumentCode
3199949
Title
Design considerations for GaN based MMICs
Author
Campbell, Charles F. ; Dumka, Deep C. ; Kao, Ming-Yih
Author_Institution
TriQuint Semicond., Richardson, TX, USA
fYear
2009
fDate
9-11 Nov. 2009
Firstpage
1
Lastpage
8
Abstract
Select considerations related to gallium nitride (GaN) based MMIC design are discussed. The unique properties of this material pose challenges to IC designers not typically encountered in gallium arsenide (GaAs) based technology. Specific examples of how some of these issues impact circuit design are discussed for wideband power amplifiers, high efficiency class-E power amplifiers and high power switching transistors.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium compounds; integrated circuit design; wide band gap semiconductors; wideband amplifiers; GaN; IC designers; MMICs; circuit design; class-E power amplifiers; power switching transistor; wideband power amplifier; Broadband amplifiers; Capacitors; Gallium arsenide; Gallium nitride; High power amplifiers; MMICs; Power amplifiers; Power generation; Switches; Switching circuits; Class-E power amplifiers; Gallium Nitride; control components; wideband power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on
Conference_Location
Tel Aviv
Print_ISBN
978-1-4244-3985-0
Type
conf
DOI
10.1109/COMCAS.2009.5386036
Filename
5386036
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