DocumentCode :
3200444
Title :
Multi-cantilever HEMT-based resonant sensor
Author :
Khmyrova, Irina ; Shestakova, Elena
Author_Institution :
Comput. Nanoelectron. Lab., Univ. of Aizu, Aizu-Wakamatsu, Japan
fYear :
2009
fDate :
9-11 Nov. 2009
Firstpage :
1
Lastpage :
4
Abstract :
In this paper resonant sensor based on micro-machined high-electron mobility transistor (HEMT) in which multiple suspended resonant cantilevers serve as floating gates is proposed and its analytical and lumped equivalent circuit models are developed. The proposed HEMT-based multi-cantilever resonant sensor enables electrostatic actuation and electrical readout. Mass absorption by a cantilever results in the change in its mechanical resonant frequency. Mechanical oscillations of such a cantilever excited electrically control the source-drain current. Thus, its resonant frequency shift can be detected as a frequency shift in the resonant peak of the source-drain current. Mechanical oscillations of each cantilever and electromechanical transducer are represented by relevant circuit components. The developed equivalent circuit of multi-cantilever resonant sensor was used to simulate its frequency response using Is-Spice software. The simulation reveals an enhanced source-drain current with a peak at a single frequency for the array of the identical cantilevers. In the case of multiple different cantilevers the simulated source-drain current reveals peaks at frequencies corresponding to mechanical resonances of the cantilevers, as expected.
Keywords :
SPICE; cantilevers; electromechanical effects; equivalent circuits; high electron mobility transistors; micromechanical resonators; microsensors; oscillations; semiconductor device models; sensor arrays; Is-Spice software; analytical model; electrical readout; electrocmechanical transducer; electrostatic actuation; floating gates; frequency response; high-electron mobility transistor; lumped equivalent circuit model; mechanical oscillations; mechanical resonances; mechanical resonant frequency; micromachining; multi-cantilever HEMT-based resonant sensor; multiple suspended resonant cantilevers; source-drain current; Absorption; Circuit simulation; Electrostatic actuators; Equivalent circuits; HEMTs; MODFETs; Mechanical sensors; Resonance; Resonant frequency; Transducers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4244-3985-0
Type :
conf
DOI :
10.1109/COMCAS.2009.5386064
Filename :
5386064
Link To Document :
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