Title :
Fast and noise-aware power-up for on-die power gated domains
Author :
Sofer, Sergey ; Tzytkin, Dov ; Neiman, Valery ; Melamed-Kohen, Eyal
Author_Institution :
Freescale Semicond. Israel Ltd., Herzelia, Israel
Abstract :
On-die PSO is used for leakage power reduction. The power-up process at PSO exit (gated supply voltage recovery) is usually designed to be relatively slow process. This is done in order to keep quiet continuous power supply of always powered-on devices. We propose a way of acceleration the power-up, while holding the continuous power supply at acceptable level of noise. This is achieved by monitoring the IR droop level of the continuous power supply. It allows significant reduction of the power-up time with no functionality impact. The theoretical background, the arrangement schematics and the simulation results are presented.
Keywords :
leakage currents; power consumption; power supplies to apparatus; IR droop level; continuous power supply; gated supply voltage recovery; leakage power reduction; noise-aware power-up; on-die power gated domains; power shut-off technique; power-up time; powered-on devices; Energy consumption; MOS capacitors; MOSFET circuits; Power MOSFET; Power supplies; Semiconductor device noise; Switches; Switching circuits; Very large scale integration; Voltage; IR droop; PSO; power gating; power-up; switch control;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems, 2009. COMCAS 2009. IEEE International Conference on
Conference_Location :
Tel Aviv
Print_ISBN :
978-1-4244-3985-0
DOI :
10.1109/COMCAS.2009.5386067