Fabrication of GaInNAs-based Solar Cells for Application to Multi-junction Tandem Solar Cells

Author

Miyashita, Naoya ; Shimizu, Yukiko ; Kobayashi, Naoto ; Okada, Yoshitaka ; Yamaguchi, Masafumi

Author_Institution

Inst. of Appl. Phys., Tsukuba Univ.

Volume

1

fYear

2006

fDate

38838

Firstpage

869

Lastpage

872

Abstract

We have investigated the characteristics of p-GaAs/i-n-Ga_0.97In_0.03N_0.01As_0.99 heterojunction solar cells with different intrinsic layer thickness. The solar cells studied in this study were fabricated by atomic hydrogen-assisted RF-MBE on GaAs(001) substrates. With an optimized i-layer thickness of 600nm, maximum quantum efficiency of > 80% has been obtained, and the hole diffusion length in n-Ga_0.97In_0.03N_0.01As_0.99 film was ~160nm. Then we fabricated our first homojunction GaInNAs solar cells, and short-circuit current density of 14.2 mA/cm² has been achieved

Keywords

Hall mobility; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; solar cells; thin film devices; wide band gap semiconductors; 600 nm; GaAs; GaAs(001) substrates; GaAs-Ga_0.97In_0.03N_0.01As _0.99; GaInNAs; atomic hydrogen-assisted RF-MBE; dilute nitride semiconductors; heterojunction solar cells; hole diffusion length; homojunction solar cells; intrinsic layer; multijunction tandem solar cells; quantum efficiency; semiconductor-based solar cells fabrication; short-circuit current density; Atomic layer deposition; Degradation; Fabrication; Gallium arsenide; Heterojunctions; Nitrogen; Optical films; Optical scattering; Photonic band gap; Photovoltaic cells; Dilute nitride semiconductors; Multi-junction solar cells; RF-MBE;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279595

Filename

4059768