Title :
High power, high efficiency PHEMTs for use at 8 GHz
Author :
Teeter, D. ; Bouthillette, S. ; Aucoin, L. ; Platzker, A. ; Alfaro, C. ; Bradford, Dana
Author_Institution :
Adv. Device Center, Raytheon Co., Andover, MA, USA
Abstract :
Power PHEMTs from 4.8 mm to 14.4 mm gate periphery have been characterized at 8 GHz to study the effect of device scaling on output power, gain, and efficiency. The effect of unit gate width, gate to gate spacing, and substrate thickness on PHEMT performance is also described. A 14.4 mm device delivered 8.09 W with 12.67 dB associated gain and 55.8% PAE under 8 V operation at 8 GHz.<>
Keywords :
microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; semiconductor technology; 12.67 dB; 55.8 percent; 8 GHz; 8 V; 8.09 W; PAE; device scaling; efficiency; gain; gate periphery; gate to gate spacing; output power; power PHEMTs; power added efficiency; pseudomorphic transistors; substrate thickness; unit gate width; Electrical resistance measurement; Fingers; Frequency; Gallium arsenide; K-band; PHEMTs; Performance gain; Power amplifiers; Power generation; Radar;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405978
