DocumentCode
3200717
Title
High power, high efficiency PHEMTs for use at 8 GHz
Author
Teeter, D. ; Bouthillette, S. ; Aucoin, L. ; Platzker, A. ; Alfaro, C. ; Bradford, Dana
Author_Institution
Adv. Device Center, Raytheon Co., Andover, MA, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
323
Abstract
Power PHEMTs from 4.8 mm to 14.4 mm gate periphery have been characterized at 8 GHz to study the effect of device scaling on output power, gain, and efficiency. The effect of unit gate width, gate to gate spacing, and substrate thickness on PHEMT performance is also described. A 14.4 mm device delivered 8.09 W with 12.67 dB associated gain and 55.8% PAE under 8 V operation at 8 GHz.<>
Keywords
microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; semiconductor technology; 12.67 dB; 55.8 percent; 8 GHz; 8 V; 8.09 W; PAE; device scaling; efficiency; gain; gate periphery; gate to gate spacing; output power; power PHEMTs; power added efficiency; pseudomorphic transistors; substrate thickness; unit gate width; Electrical resistance measurement; Fingers; Frequency; Gallium arsenide; K-band; PHEMTs; Performance gain; Power amplifiers; Power generation; Radar;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.405978
Filename
405978
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