Title :
RF Dielectric Properties of SIC Ceramics and their Application to Design of HOM Absorbers
Author :
Takeuchi, Y. ; Abe, T. ; Kageyama, T. ; Sakai, H.
Author_Institution :
KEK, Tsukuba, 305-0801, Japan
Abstract :
The KEKB ARES cavity is equipped with two types of HOM absorbers, which are made of different commercial products of the alpha-type SiC ceramics. Their dielectric responses to the RF frequency show the dielectric relaxation properties. These properties can be explained by the polycrystal structure model with electrically conductive grains and non-conductive grain boundaries. In this article, the RF dielectric properties of the SiC ceramics are discussed together with the application to HOM absorbers.
Keywords :
Ceramics; Conducting materials; Crystalline materials; Dielectric materials; Dielectric measurements; Frequency measurement; Grain boundaries; Permittivity measurement; Radio frequency; Silicon carbide;
Conference_Titel :
Particle Accelerator Conference, 2005. PAC 2005. Proceedings of the
Print_ISBN :
0-7803-8859-3
DOI :
10.1109/PAC.2005.1590705