Title :
A monolithic approach for Q-band integrated active phased array transmitting antenna
Author :
Yen, H.C. ; Esfandiari, R. ; Hwang, Y. ; Tan, K. ; Liu, C. ; Aust, M. ; Carandang, R. ; Wang, H.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A monolithic design approach for a Q-band integrated active phased array transmitting antenna using InGaAs/GaAs pseudomorphic HEMT (high electron mobility transistor) technology is proposed. Major components, including a high-gain, high-efficiency monolithic amplifier and a three-bit switched line, monolithic phase shifter, have been developed and tested. The amplifier measured gain is 19.5 dB with 20% efficiency at 44 GHz. The phase shifter has a measured insertion loss of 7.5 dB and a phase error of less than 7 degrees from 43 to 45 GHz for all phase states. A design of a 2*2 active subarray on GaAs substrate is also presented.<>
Keywords :
MMIC; antenna phased arrays; broadcast antennas; high electron mobility transistors; microwave amplifiers; microwave antenna arrays; phase shifters; 19.5 dB; 20 percent; 43 to 45 GHz; 7.5 dB; EHF; GaAs substrate; InGaAs-GaAs; Q-band integrated active antenna; high electron mobility transistor; high gain amplifier; high-efficiency monolithic amplifier; insertion loss; monolithic design; monolithic phase shifter; phase error; phased array transmitting antenna; three-bit switched line; Antenna arrays; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; PHEMTs; Phase shifters; Phased arrays; Testing; Transmitting antennas;
Conference_Titel :
Antennas and Propagation Society International Symposium, 1992. AP-S. 1992 Digest. Held in Conjuction with: URSI Radio Science Meeting and Nuclear EMP Meeting., IEEE
Conference_Location :
Chicago, IL, USA
Print_ISBN :
0-7803-0730-5
DOI :
10.1109/APS.1992.221985
