DocumentCode :
3200965
Title :
Long term behaviour of passively heated or cooled a-Si:H modules
Author :
Hof, C. ; Lüdi, M. ; Goetz, M. ; Fischer, D. ; Shah, A.
Author_Institution :
Inst. of Microtechnol., Neuchatel Univ., Switzerland
fYear :
1996
fDate :
13-17 May 1996
Firstpage :
1057
Lastpage :
1060
Abstract :
We compare the outdoor performance of single junction a-Si:H PV-modules which were mounted in three different ways. One was thermally well isolated against convection and radiation losses in order to reach maximum operating temperatures. A second one was fixed onto a radiator to keep its temperature as close as possible to the air temperature. A third one served as a reference and was mounted with an open back side. The operating temperature of the modules could be strongly influenced by the different mountings. Although a high operating temperature results in a reduced VOC, it turned out to be beneficial for effective energy conversion in the long term due to a strongly reduced Staebler-Wronski degradation
Keywords :
Staebler-Wronski effect; amorphous semiconductors; cooling; elemental semiconductors; heating; hydrogen; p-n junctions; semiconductor device testing; silicon; solar cell arrays; solar cells; Si:H; Staebler-Wronski degradation reduction; convection losses; effective energy conversion; maximum operating temperatures; open back side; operating temperature; outdoor performance; passively cooled a-Si:H modules; passively heated a-Si:H modules; radiation losses; single junction a-Si:H PV-modules; thermally isolated PV module; Crystallization; Degradation; Glass; Lighting; Photovoltaic systems; Silicon; Temperature distribution; Temperature measurement; Temperature sensors; Windows;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
ISSN :
0160-8371
Print_ISBN :
0-7803-3166-4
Type :
conf
DOI :
10.1109/PVSC.1996.564312
Filename :
564312
Link To Document :
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