GaAs semi-insulated-gate FETs (SIGFETs) as high power MMIC control devices

Author

Yun, Y.-H. ; Gutmann, R.J.

Author_Institution

M/A-COM, Lowell, MA, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

997

Abstract

The GaAs SIGFETs device structure, fabrication, initial experimental performance and advantages compared to conventional recessed-gate GaAs MESFET devices are described. GaAs planar SIGFETs have been fabricated with higher continuous-wave power handling capability than and similar switching frequency figure-of-merit to those of comparable GaAs recessed-gate MESFETs. Initial SIGFET devices demonstrated 3 dB to 5 dB increase in power-handling capability with a switching frequency figure-of-merit of 362 GHz. This improved power performance is due chiefly to the semi-insulated layer under the gate metal, which allows higher gate-breakdown voltage as well as higher drain saturation current.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; insulated gate field effect transistors; microwave integrated circuits; power transistors; 18 GHz; GaAs; IGFET; III-V semiconductors; MMIC control devices; continuous-wave power handling capability; device structure; drain saturation current; experimental performance; fabrication; gate-breakdown voltage; high power; planar SIGFETs; semi-insulated gate; semi-insulated-gate FETs; switching frequency; FETs; Fabrication; Gallium arsenide; Ice; Ion implantation; MESFETs; MMICs; Radio frequency; Switching frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22199

Filename

22199