Title :
28th Annual Proceedings. Reliability Physics 1990 (Cat. No.90CH2787-0)
Keywords :
electric breakdown of solids; electromigration; failure analysis; integrated circuit technology; packaging; reliability; semiconductor technology; voids (solid); GaAs; charge trapping; device issues; electromigration; failure analysis; ferroelectrics; nitride dielectrics; oxide breakdown; packaging issues; reliability; reliability assessment; stress-induced voiding;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66104