Preparation of high and low bandgap amorphous silicon by PECVD and their application in solar cell

Author

Ray, Swati ; Hazra, Sukti

Author_Institution

Energy Res. Unit, Indian Assoc. for the Cultivation of Sci., Calcutta, India

fYear

1996

fDate

13-17 May 1996

Firstpage

1077

Lastpage

1080

Abstract

Low and high bandgap a-Si:H thin films have been developed by PECVD using helium and hydrogen dilution at high plasma power regime. The growth kinetics are completely different for the two cases. The optoelectronic properties are comparable to those of device quality high and low bandgap alloy materials whereas light induced degradations are less. Structural studies have revealed the presence of nanocrystallites in amorphous matrix in both the materials. Both type of materials have been used as intrinsic layers of single junction solar cells

Keywords

amorphous semiconductors; elemental semiconductors; energy gap; hydrogen; nanostructured materials; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; solar cells; PECVD; Si:H; amorphous matrix; helium dilution; high bandgap a-Si:H thin films; hydrogen dilution; intrinsic layers; light induced degradation; low bandgap a-Si:H thin films; nanocrystallites; optoelectronic properties; single junction solar cells; Amorphous silicon; Degradation; Helium; Hydrogen; Kinetic theory; Photonic band gap; Plasma devices; Plasma materials processing; Plasma properties; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564317

Filename

564317