Title :
The design and simulation study of the electrothermal excitation resonant beam based on slit-structure stress concentration effect
Author :
Shi, HuiChao ; Fan, Shangchun ; Xing, Weiwei ; Sun, Jinhao
Author_Institution :
Sch. of Instrum. Sci. & Opto-Electron. Eng., Beihang Univ., Beijing, China
Abstract :
This paper studied the stress concentration effect of silt structure on the resonant beam, and proposed a slit-resonant beam based on the double clamped resonant beam theory of silicon micro-machined resonant pressure sensor. The stress concentration effect can enhance surface alternating stress in the root area of beam when resonant beam is vibrating. Detection resistor is sensitive to this alternating stress, which make the changing value of resistance increase. By finite element analysis software, static analysis is conducted to get the stress concentration factor and amplitude detection sensitivity. Result show that the slit structure could strengthen the useful signal, increase the amplitude detection sensitivity of the resonant beam, and improve signal to noise ratio (SNR), all of which could well verify the correctness of the design. And the research in silt structure stress concentration effect could provide a reference to further optimization and design for the resonant beam.
Keywords :
finite element analysis; microsensors; pressure sensors; SNR; amplitude detection sensitivity; detection resistor; double clamped resonant beam theory; electrothermal excitation resonant beam; finite element analysis software; resonant beam vibration; signal to noise ratio; silicon micromachined resonant pressure sensor; simulation; slit-structure stress concentration effect; static analysis; surface alternating stress; Finite element methods; Resistance; Resistors; Resonant frequency; Sensitivity; Stress; Vibrations; Amplitude detedtion sensitivit; Resonant pressure sensor; Slit-resonant beam; Stress concentration effect;
Conference_Titel :
Instrumentation and Control Technology (ISICT), 2012 8th IEEE International Symposium on
Conference_Location :
London
Print_ISBN :
978-1-4673-2615-5
DOI :
10.1109/ISICT.2012.6291604