Title :
Self-limiting growth of transparent conductive ZnO films by atomic layer deposition [for solar cells]
Author :
Sang, Baosheng ; Konagai, Makoto
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
ZnO films have been grown by atomic layer deposition (ALD) using diethylzinc (DEZn) and H2O as reactant gases for solar cell applications. Self-limiting growth was observed for substrate temperatures from 105 to 165°C, even when the flow rates of DEZn and H2O were varied. The film thickness was very uniform, which was greatly improved compared to films grown by MOCVD. The orientation of ZnO films depends strongly on the substrate temperature. A high electron mobility of 30 cm2 N·s is obtained for undoped 220 nm thick ZnO films, which is higher than that of films grown by MOCVD
Keywords :
II-VI semiconductors; atomic layer epitaxial growth; carrier mobility; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; solar cells; zinc compounds; 105 to 165 C; 220 nm; ZnO; atomic layer deposition; diethylzinc; electron mobility; self-limiting growth; solar cell; substrate temperatures; transparent conductive ZnO films; Atomic layer deposition; Conductive films; Electron mobility; Gases; MOCVD; Photovoltaic cells; Plasma temperature; Substrates; Temperature dependence; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564319
