Self-limiting growth of transparent conductive ZnO films by atomic layer deposition [for solar cells]

Author

Sang, Baosheng ; Konagai, Makoto

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan

fYear

1996

fDate

13-17 May 1996

Firstpage

1085

Lastpage

1088

Abstract

ZnO films have been grown by atomic layer deposition (ALD) using diethylzinc (DEZn) and H₂O as reactant gases for solar cell applications. Self-limiting growth was observed for substrate temperatures from 105 to 165°C, even when the flow rates of DEZn and H₂O were varied. The film thickness was very uniform, which was greatly improved compared to films grown by MOCVD. The orientation of ZnO films depends strongly on the substrate temperature. A high electron mobility of 30 cm² N·s is obtained for undoped 220 nm thick ZnO films, which is higher than that of films grown by MOCVD

Keywords

II-VI semiconductors; atomic layer epitaxial growth; carrier mobility; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; solar cells; zinc compounds; 105 to 165 C; 220 nm; ZnO; atomic layer deposition; diethylzinc; electron mobility; self-limiting growth; solar cell; substrate temperatures; transparent conductive ZnO films; Atomic layer deposition; Conductive films; Electron mobility; Gases; MOCVD; Photovoltaic cells; Plasma temperature; Substrates; Temperature dependence; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564319

Filename

564319