Title :
Enhancement of a-Si:H solar cell characteristics by hydrogen treatment at p/i interface using photo-CVD method
Author :
Jang, Jae-Hoon ; Lim, Koeng-Su
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
The authors propose hydrogen treatment at the p/i interface, using the mercury-sensitized photo-CVD method, as an effective technique to improve the characteristics of a-Si:H solar cells. The conversion efficiency increases by 19.3% compared to the no-hydrogen treatment case when the hydrogen treatment time is 20 minutes and the flow rate is 100 sccm. It was found that the hydrogen treatment time and hydrogen flow rate are very important factors for effective hydrogenation of the p/i interface and consequently improving the cell performance
Keywords :
CVD coatings; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; hydrogen; p-n junctions; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; Si:H; a-Si:H solar cells; characteristics enhancement; conversion efficiency; flow rate; hydrogen treatment; hydrogenation; p/i interface; photo-CVD method; solar cell performance; treatment time; Buffer layers; Fabrication; Glass; Hydrogen; Passivation; Photonic band gap; Photovoltaic cells; Plasma properties; Short circuit currents; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564320
