DocumentCode
3201114
Title
The role of H2 dilution in the deposition of a-Si:H films and its effect on the solar cell degradation
Author
Siamchai, Pavan ; Konagai, Makoto
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fYear
1996
fDate
13-17 May 1996
Firstpage
1093
Lastpage
1096
Abstract
The role of H2 dilution in the mercury-sensitized photochemical vapor deposition of a-Si:H film solar cells has been investigated by using D2 as a diluent instead of H2. The increase in the D content in the a-Si:H,D film with the D2/SiH4 dilution ratio indicated that the H 2 dilution could increase the atomic hydrogen concentration near the growth surface. In addition, the numerical model has been used to estimate the change in the dangling bonds density and energy level in the H2-diluted film by comparing with the temperature dependency of dark conductivity in initial and light-soaked states. It was found that the center level of the dangling bonds shifted toward the valence band edge as the bandgap of the film widened due to the H2 dilution. This shift in the dangling bonds level in the i layer resulted in the increase of open circuit voltage of a-Si:H solar cell with the light soaking time as confirmed by simulation and experimental results
Keywords
CVD coatings; amorphous semiconductors; chemical vapour deposition; dangling bonds; deuterium; elemental semiconductors; energy gap; hydrogen; semiconductor device models; semiconductor device testing; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; solar cells; H2 dilution; Si:H,D; a-Si:H film deposition; a-Si:H,D solar cells; atomic hydrogen concentration; bandgap; dangling bonds density; dark conductivity; energy level; growth surface; light soaking time; numerical model; open circuit voltage; photochemical vapor deposition; solar cell degradation; solar cell fabrication; valence band edge; Chemical vapor deposition; Conductive films; Conductivity; Energy states; Hydrogen; Numerical models; Photochemistry; Photovoltaic cells; State estimation; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location
Washington, DC
ISSN
0160-8371
Print_ISBN
0-7803-3166-4
Type
conf
DOI
10.1109/PVSC.1996.564321
Filename
564321
Link To Document