Title :
Density of states measurements in a p-i-n solar cell
Author :
Crandall, Richard S. ; Wang, Qi
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
The authors describe the results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. They show that the states in the central region are neutral dangling-bond defects, whereas those near the interfaces with the doped layers are charged dangling bonds
Keywords :
crystal defects; dangling bonds; electronic density of states; semiconductor device testing; solar cells; charged dangling bonds; defect density; density of states profiling; doped layers; drive-level capacitance techniques; n-i interface; neutral dangling-bond defects; p-i-n solar cell; semiconductor measurements; Capacitance measurement; Capacitance-voltage characteristics; Density measurement; Dielectric measurements; Doping; Frequency; PIN photodiodes; Photovoltaic cells; Temperature; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564327
