DocumentCode :
3201449
Title :
High efficiency microwave harmonic reaction amplifier
Author :
Nojima, T. ; Nishiki, S.
Author_Institution :
Radio Commun. Syst. Lab., NTT, Kanagawa, Japan
fYear :
1988
fDate :
25-27 May 1988
Firstpage :
1007
Abstract :
The principle of operation of the high-efficiency harmonic reaction amplifier (HRA) is clarified. The HRA is basically constructed of a pair of power FETs. The technical originality lies in the provision of an interconnecting circuit for providing an additional second-harmonic transmission path between the two FETs. These paths are designed to have impedance characteristics matched to the FETs´ output impedances in the fundamental frequency band and in the second-harmonic frequency band, respectively. This additional circuit realizes the efficient and stable switching-mode operation required for highly efficient microwave power amplification. Theoretical analysis results indicate that a drain efficiency of 86% is available for an ideal HRA of purely class-B operation. Experiments on a miniaturized 2-GHz 5-W HRA module were conducted to verify analysis results. A power-added efficiency of over 70% was achieved confirming that the HRA can be applied practically to microwave power amplifiers. A HRA capability for high-efficiency operation as a linear amplifier under class-AB conditions is also shown by the experiments.<>
Keywords :
field effect transistor circuits; microwave amplifiers; power amplifiers; solid-state microwave circuits; 2 GHz; 5 W; 70 percent; class-AB conditions; class-B operation; high-efficiency; impedance characteristics; impedance matching; interconnecting circuit; linear amplifier; microwave harmonic reaction amplifier; microwave power amplification; power FETs; power-added efficiency; second-harmonic transmission path; stable switching-mode operation; Frequency; Impedance; Microwave FETs; Microwave amplifiers; Microwave circuits; Microwave devices; Operational amplifiers; Power amplifiers; Radio communication; Radiofrequency amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/MWSYM.1988.22201
Filename :
22201
Link To Document :
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