• DocumentCode
    3201449
  • Title

    High efficiency microwave harmonic reaction amplifier

  • Author

    Nojima, T. ; Nishiki, S.

  • Author_Institution
    Radio Commun. Syst. Lab., NTT, Kanagawa, Japan
  • fYear
    1988
  • fDate
    25-27 May 1988
  • Firstpage
    1007
  • Abstract
    The principle of operation of the high-efficiency harmonic reaction amplifier (HRA) is clarified. The HRA is basically constructed of a pair of power FETs. The technical originality lies in the provision of an interconnecting circuit for providing an additional second-harmonic transmission path between the two FETs. These paths are designed to have impedance characteristics matched to the FETs´ output impedances in the fundamental frequency band and in the second-harmonic frequency band, respectively. This additional circuit realizes the efficient and stable switching-mode operation required for highly efficient microwave power amplification. Theoretical analysis results indicate that a drain efficiency of 86% is available for an ideal HRA of purely class-B operation. Experiments on a miniaturized 2-GHz 5-W HRA module were conducted to verify analysis results. A power-added efficiency of over 70% was achieved confirming that the HRA can be applied practically to microwave power amplifiers. A HRA capability for high-efficiency operation as a linear amplifier under class-AB conditions is also shown by the experiments.<>
  • Keywords
    field effect transistor circuits; microwave amplifiers; power amplifiers; solid-state microwave circuits; 2 GHz; 5 W; 70 percent; class-AB conditions; class-B operation; high-efficiency; impedance characteristics; impedance matching; interconnecting circuit; linear amplifier; microwave harmonic reaction amplifier; microwave power amplification; power FETs; power-added efficiency; second-harmonic transmission path; stable switching-mode operation; Frequency; Impedance; Microwave FETs; Microwave amplifiers; Microwave circuits; Microwave devices; Operational amplifiers; Power amplifiers; Radio communication; Radiofrequency amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1988., IEEE MTT-S International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1988.22201
  • Filename
    22201