• DocumentCode
    3201840
  • Title

    Effect of textured tin oxide and zinc oxide substrates on the current generation in amorphous silicon solar cells

  • Author

    Hegedus, S. ; Buchanan, W. ; Liu, X. ; Gordon, R.

  • Author_Institution
    Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    1129
  • Lastpage
    1132
  • Abstract
    The authors evaluate material properties of a number of textured SnO2 and ZnO substrates and their effect on current generation in a-Si. Most of these TCOs have been used by others for a-Si solar cell research or module fabrication. Bulk optoelectronic and structural properties are reported for seven TCO films with haze from 1 to 14%. Their results show that increasing haze above ~5% has limited effectiveness for increasing the generation at long wavelengths. In presently available textured ZnO, current generation is about 0.6 mA/cm 2 greater than in textured SnO2. There may be greater advantages to using ZnO in multijunction devices since much thinner i-layers may be used to give the same short-circuit current with improved stability, shorter deposition time and less GeH4 usage
  • Keywords
    amorphous semiconductors; elemental semiconductors; semiconductor device testing; silicon; solar cells; substrates; surface texture; GeH4 usage; Si; SnO2; ZnO; amorphous silicon solar cells; bulk optoelectronic properties; bulk structural properties; current generation; deposition time; haze; material properties; module fabrication; multijunction devices; short-circuit current; solar cell research; stability; textured substrates; Amorphous materials; Electron optics; Optical buffering; Optical films; Optical scattering; Photovoltaic cells; Solar power generation; Substrates; Tin; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564330
  • Filename
    564330