Title :
Good Surface Passivation of C-SI by High Rate Plasma Deposited Silicon Oxide
Author :
Hoex, B. ; Peeters, F.J.J. ; Creatore, M. ; Bijker, M.D. ; Kessels, W.M.M. ; van de Sanden, Mauritius C. M.
Author_Institution :
Dept. of Appl. Phys., Eindhoven Univ. of Technol.
Abstract :
Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC
Keywords :
Fourier transform spectra; Rutherford backscattering; elemental semiconductors; infrared spectra; passivation; plasma CVD; silicon; silicon compounds; thin films; 600 C; FZ crystalline silicon wafers; Fourier transform infrared spectroscopy; Rutherford backscattering; Si; SiO2; argon-oxygen-octamethylcyclotetrasiloxane; high rate plasma deposited silicon oxide; silicon; silicon dioxide films; spectroscopic ellipsometry; surface passivation; thermal plasma technique; Ellipsometry; Fourier transforms; Gas industry; Infrared spectra; Passivation; Plasma applications; Semiconductor films; Silicon compounds; Spectroscopy; Thermal expansion;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279361
