Interpretation of Photo-Conductivity Decay Lifetime in Silicon Spheres

A novel modeling approach for extracting and interpreting the photoconductivity decay pattern in silicon spheres after an impulse laser excitation is presented. It has been shown that a single exponential fit to conductivity decay will lead to inaccurate data interpretation and would only be possible if radial laser excitation were applied. A double-exponential kinetic has been fit to the experimental results to extract both bulk recombination lifetime and surface recombination velocity