DocumentCode :
3201890
Title :
Comparative Study of Laser Induced Damage in Silicon Wafers
Author :
Baumann, S. ; Kray, D. ; Mayer, K. ; Eyer, A. ; Willeke, G.P.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg
Volume :
1
fYear :
2006
fDate :
38838
Firstpage :
1142
Lastpage :
1145
Abstract :
In this paper we present different possibilities like QSSPC lifetime measurements, X-ray diffraction and defect etch to measure laser induced damage in silicon wafers. The lifetime measurement results of the laser chemical etching (LCE), Laser Micro Jettrade (LMJ) and a standard laser are plotted in a diagram. Furthermore the defect etch investigation was done with Yang etch and the etch pits are analyzed with scanning electron microscopy. In order to show the advantage of the waterjet guided laser and accordingly of LCE, we compare the LMJ/LCE laser grooves with a standard Nd:YAG scanning laser system for each method
Keywords :
X-ray diffraction; etching; laser beam etching; photoconductivity; scanning electron microscopy; silicon; LCE; LMJ; Nd:YAG scanning laser system; QSSPC lifetime; Si; X-ray diffraction; Yang etch; defect etch; etch pits; laser chemical etching; laser induced damage; laser micro jet; quasisteady state photoconductance; scanning electron microscopy; silicon wafers; waterjet guided laser; Chemical lasers; Electrons; Etching; Laser ablation; Laser beam cutting; Lifetime estimation; Silicon; Surface acoustic waves; X-ray diffraction; X-ray lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279363
Filename :
4059836
Link To Document :
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