Comparative Study of Laser Induced Damage in Silicon Wafers

Author

Baumann, S. ; Kray, D. ; Mayer, K. ; Eyer, A. ; Willeke, G.P.

Author_Institution

Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg

Volume

1

fYear

2006

fDate

38838

Firstpage

1142

Lastpage

1145

Abstract

In this paper we present different possibilities like QSSPC lifetime measurements, X-ray diffraction and defect etch to measure laser induced damage in silicon wafers. The lifetime measurement results of the laser chemical etching (LCE), Laser Micro Jettrade (LMJ) and a standard laser are plotted in a diagram. Furthermore the defect etch investigation was done with Yang etch and the etch pits are analyzed with scanning electron microscopy. In order to show the advantage of the waterjet guided laser and accordingly of LCE, we compare the LMJ/LCE laser grooves with a standard Nd:YAG scanning laser system for each method

Keywords

X-ray diffraction; etching; laser beam etching; photoconductivity; scanning electron microscopy; silicon; LCE; LMJ; Nd:YAG scanning laser system; QSSPC lifetime; Si; X-ray diffraction; Yang etch; defect etch; etch pits; laser chemical etching; laser induced damage; laser micro jet; quasisteady state photoconductance; scanning electron microscopy; silicon wafers; waterjet guided laser; Chemical lasers; Electrons; Etching; Laser ablation; Laser beam cutting; Lifetime estimation; Silicon; Surface acoustic waves; X-ray diffraction; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279363

Filename

4059836