Title :
Load pull characteristics of GaAs MESFETs calculated using an analytic, physics based large signal device model
Author :
Stoneking, D.E. ; Trew, R.J. ; Yan, J.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The large-signal nonlinear load-pull characteristics of power GaAs MESFETs fabricated with uniform, ion-implanted, and lo-hi-lo doping profiles are calculated theoretically and compared. The calculation is performed using a load-pull simulator in conjunction with a physics-based, analytic device model. The device and circuit models are interfaced using a harmonic balance routine.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit CAD; gallium arsenide; nonlinear network analysis; semiconductor device models; solid-state microwave devices; GaAs; MESFETs; circuit models; doping profile; harmonic balance routine; ion implantation; lo-hi-lo doping profiles; load-pull characteristics; load-pull simulator; nonlinear model; physics based large signal device model; power MESFETs; uniform doping profile; Circuit simulation; Doping profiles; FETs; Gallium arsenide; MESFETs; MMICs; Physics; Radio frequency; Semiconductor process modeling; Signal analysis;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22213
