Evidence of surface states for 4H-SiC MESFETs on semi-insulating substrates by current transient spectroscopy

Author

Gassoumi, M. ; Dermoul, I. ; Chekir, F. ; Sghaier, N. ; Maaref, H. ; Bluet, J.M. ; Guillot, G. ; Morvan, E. ; Noblanc, O. ; Dua, C. ; Brylinski, C.

Author_Institution

Lab. de Phys. des Semiconducteurs et des Composants Electroniques, Faculte des Sci. de Monastir, Tunisia

Volume

2

fYear

2004

fDate

16-19 May 2004

Firstpage

417

Abstract

Conductance DLTS measurements performed on 4H-SiC MESFETs shows "hole-like" traps peaks. These levels are associated with surface states. The conductance measurements are interpreted using a model previously developed for GaAs MESFETs which involves the presence of an interface conducting layer between the channel and the passivating layer (SiC/SiO₂ in our case).

Keywords

Schottky gate field effect transistors; deep level transient spectroscopy; interface states; silicon compounds; surface states; 4H-SiC MESFETs; DLTS measurements; SiC; SiC/SiO₂; current transient spectroscopy; hole-like traps peaks; interface conducting layer; passivating layer; semi-insulating substrates; surface states; Buffer layers; Doping; Electric breakdown; Fabrication; MESFETs; Passivation; Performance evaluation; Silicon carbide; Spectroscopy; Substrate hot electron injection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314850

Filename

1314850