Title :
High power RF generation with optically activated bulk GaAs devices
Author :
Kim, A. ; Weiner, M. ; Youmans, R. ; Herczfeld, P. ; Rosen, A.
Author_Institution :
US Army Electron. Technol. & Devices Lab., Fort Monmouth, NJ, USA
Abstract :
The direct generation of high-power radio frequencies was demonstrated, utilizing sections of charged transmission line cables and optically activated semiconductor (OAS) switches. A Q-switched Nd:YAG laser was used to switch an array of GaAs semiconductors, biased at 2 kV DC, resulting in a peak RF output of 7.0 kW at VHF (30 MHz). The maximum current achieved was approximately 12 A, with a pulse width of about 100 ns, instead of the anticipated values of 20 A and 67.5 ns. The longer pulse width, as well as the lower current amplitude, are caused primarily by inductance in the connections between OAS devices.<>
Keywords :
III-V semiconductors; coaxial cables; gallium arsenide; optoelectronic devices; photoconducting devices; radiofrequency oscillators; semiconductor switches; 100 ns; 12 A; 2 kV; 30 MHz; 7 kW; GaAs; OAS devices; Q-switched lasers; RF generation; VHF; YAG:Nd lasers; YAl5O12:Nd; current amplitude; direct generation; high-power radio frequencies; optically activated bulk GaAs devices; optically activated semiconductor switches; optoelectronic switch; peak current; pulse width; sections of charged transmission line cables; stray inductance; Cables; Gallium arsenide; Optical devices; Optical switches; Power generation; Power semiconductor switches; Power transmission lines; Radio frequency; Semiconductor laser arrays; Space vector pulse width modulation;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22216
