A quasi-optical HEMT self-oscillating mixer

Author

Hwang, V.D. ; Itoh, T.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

fYear

1988

fDate

25-27 May 1988

Firstpage

1093

Abstract

A planar quasioptical receiver circuit that compactly integrates a coupled-slot antenna and a high electron mobility transistor (HEMT) self-oscillating mixer on the same substrate is developed for applications in microwave and millimeter-wave receiver arrays. The circuit exhibits an isotropic conversion gain of 4.5 dB which is 7.5 dB higher than that of previously reported diode circuits. Results are provided for an X-band version of the circuit fabricated on an RT Duroid substrate.<>

Keywords

field effect transistor circuits; high electron mobility transistors; hybrid integrated circuits; microwave integrated circuits; microwave oscillators; mixers (circuits); 4.5 dB; HEMT self-oscillating mixer; RT Duroid substrate; SHF; X-band version; coupled-slot antenna; high electron mobility transistor; isotropic conversion gain; microwave receiver arrays; millimeter-wave receiver arrays; nonlinear FET applications; planar quasioptical receiver circuit; Coupling circuits; Diodes; Gain; HEMTs; MODFETs; Microwave antenna arrays; Microwave circuits; Millimeter wave circuits; Millimeter wave transistors; Receiving antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22221

Filename

22221