Title :
2 to 8 GHz double balanced MESFET mixer with +30 dBm input 3rd order intercept
Author :
Weiner, S. ; Neuf, D. ; Spohrer, S.
Author_Institution :
RHG Electron Lab. Inc., Deer Park, NY, USA
Abstract :
The design and operation of a multioctave double-balanced MESFET mixer operating over a 2-8-GHz range is described. Typical third-order input intercept (IP3) of +30 dBm was achieved by operating in the unbiased or passive mode with +23 dBm local oscillator (LO) input power. A quality factor is defined to show the efficiency of third-order intercept to available LO power. A single balanced MESFET mixer from 4-18-GHz with IP3 greater than +25 dBm is also discussed.<>
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; hybrid integrated circuits; microwave integrated circuits; mixers (circuits); 2 to 8 GHz; 4 to 18 GHz; SHF; design; double balanced MESFET mixer; local oscillator input power; multioctave; nonlinear FET applications; operation; passive mode; quality factor; single balanced MESFET mixer; third-order input intercept; Bandwidth; Circuit testing; Gallium arsenide; Impedance matching; Laboratories; MESFET circuits; Microstrip; Packaging; Radio frequency; Schottky diodes;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22222
