Effect of surface roughness on the properties of ohmic contacts to GaAs

Author

Dmitruk, N.L. ; Borkovskaya, O.Yu. ; Kladko, V.P. ; Konakova, R.V. ; Kudryk, Ya.Ya. ; Lytvyn, O.S. ; Milenin, V.V.

Author_Institution

V. Lash Karyov Inst. of Semicond. Phys., NAS Ukraine, Kiev, Ukraine

Volume

2

fYear

2004

fDate

16-19 May 2004

Firstpage

499

Abstract

Au/Ge/TiB_x/Au ohmic contacts to n-GaAs with textured surface have been developed and investigated. Two types of microrelief morphology (quasi-grating and dendrite-like), that are perspective for Solar Cell and sensor application, have been obtained by wet chemical anisotropic etching. The surface morphology and structural perfection were studied by AFM technique and x-ray diffractometry measurements. The effect of surface roughness on the value of contact resistivity and its lateral distribution has been investigated. The qualitative model for nonuniformity of ohmic contact formation caused by the dependence of intrinsic stresses on the interface roughness has been drawn to explain experimentally observed spread of electrical parameters.

Keywords

III-V semiconductors; X-ray diffraction; atomic force microscopy; etching; gallium arsenide; germanium; gold; interface roughness; ohmic contacts; surface morphology; surface roughness; titanium compounds; Au-Ge-TiB_x-Au-GaAs; Au/Ge/TiB_x/Au ohmic contacts; GaAs; contact resistivity; microrelief morphology; ohmic contacts; surface roughness; textured surface; wet chemical anisotropic etching; Anisotropic magnetoresistance; Chemical sensors; Gallium arsenide; Gold; Ohmic contacts; Photovoltaic cells; Rough surfaces; Surface morphology; Surface roughness; Surface texture;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. 24th International Conference on

Print_ISBN

0-7803-8166-1

Type

conf

DOI

10.1109/ICMEL.2004.1314872

Filename

1314872