• DocumentCode
    3202490
  • Title

    High quality epitaxial Ge1−xSnx alloy films on Si with a Ge buffer by molecular beam epitaxy with combined sources

  • Author

    Wang, W. ; Su, S.J. ; Zheng, J. ; Zhang, G.Z. ; Zuo, Y.H. ; Cheng, B.W. ; Wang, Q.M.

  • Author_Institution
    State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
  • fYear
    2010
  • fDate
    1-3 Sept. 2010
  • Firstpage
    347
  • Lastpage
    349
  • Abstract
    Epitaxial Ge1-xSnx alloys were grown on Si(100) by MBE at low temperature with a Ge buffer layer. The Ge buffer was grown in the same system by two step method using GeH4 as gas source.
  • Keywords
    buffer layers; germanium alloys; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; tin alloys; Ge1-xSnx-Ge; Ge1-xSnx-Si; GeH<;;sub>4<;;/sub> gas source; MBE; Si; Si(100); buffer layer; epitaxial alloy films; molecular beam epitaxy; two step method; Buffer layers; Epitaxial growth; Rough surfaces; Silicon; Surface roughness; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2010 7th IEEE International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-6344-2
  • Type

    conf

  • DOI
    10.1109/GROUP4.2010.5643331
  • Filename
    5643331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3202490